1/8 preliminary data may 2002 STD30PF03L STD30PF03L-1 p-channel 30v - 0.025 w - 24a dpak/ipak stripfet? ii power mosfet note:for the p-channel mosfet actual polarity of voltages and current has to be reversed n typical r ds(on) = 0.025 w n standard outline for easy automated surface mount assembly n low threshold drive n low gate charge n extremely low figure of merit (r ds(on) * q g ) description this power mosfet is the latest development of stmicroelectronics unique single feature size? strip-based process. the resulting transis- tor shows extremely high packing density for low on-resistance and low gate charge. applications n dc-dc converters absolute maximum ratings ( l ) pulse width limited by safe operating area (#) current limited by wire bonding type v dss r ds(on) i d STD30PF03L STD30PF03L-1 30 v 30 v < 0.028 w < 0.028 w 24 a 24 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 16 v i d (#) drain current (continuous) at t c = 25c 24 a i d (#) drain current (continuous) at t c = 100c 24 a i dm ( l ) drain current (pulsed) 96 a p tot total dissipation at t c = 25c 70 w derating factor 0.47 w/c t stg storage temperature C 55 to 175 c t j max. operating junction temperature 175 c dpak 1 3 3 2 1 ipak internal schematic diagram
STD30PF03L - STD30PF03L-1 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 2.14 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t j maximum operating junction temperature 275 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 24 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 25 v) 350 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10 v, i d = 12 a 0025 0.028 w v gs = 5 v, i d = 12 a 0.032 0.040 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 12 a 23 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1670 pf c oss output capacitance 345 pf c rss reverse transfer capacitance 120 pf
3/8 STD30PF03L - STD30PF03L-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 24 v, i d = 24 a r g = 4.7 w v gs = 4.5v (see test circuit, figure 3) 64 ns t r rise time 122 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 24 a, v gs = 5 v 18.5 5.5 11 25 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 24 v, i d = 24 a, r g =4.7 w, v gs = 4.5v (see test circuit, figure 3) 36 26 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 24 a i sdm (2) source-drain current (pulsed) 96 a v sd (1) forward on voltage i sd = 24 a, v gs = 0 2.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 24 a, di/dt = 100 a/s, v dd = 24 v, t j = 150 c (see test circuit, figure 5) 40 52 2.6 ns m c a
STD30PF03L - STD30PF03L-1 4/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/8 STD30PF03L - STD30PF03L-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD30PF03L - STD30PF03L-1 6/8 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
7/8 STD30PF03L - STD30PF03L-1 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
STD30PF03L - STD30PF03L-1 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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